leshan radio company, ltd. o2?1/2 vhf / ufh transistor npn silicon maximum ratings rating symbol value unit collector?emitter voltage v ceo 15 vdc collector?base voltage v cbo 30 vdc emitter?base voltage v ebo 3.0 vdc collector current ? continuous i c 50 madc thermal characteristics characteristic symbol max unit total device dissipation fr? 5 board, (1) p d 225 mw t a = 25c derate above 25c 1.8 mw/c thermal resistance, junction to ambient r ja 556 c/w total device dissipation p d 300 mw alumina substrate, (2) t a = 25c derate above 25c 2.4 mw/c thermal resistance, junction to ambient r ja 417 c/w junction and storage temperature t j , t stg ?55 to +150 c device marking mmbt9181lt1 = m3b electrical characteristics (t a = 25c unless otherwise noted.) characteristic symbol min max unit off characteristics collector?emitter breakdown voltage v (br)ceo 15 ? vdc (i c = 3.0 madc, i b = 0) collector?base breakdown voltage v (br)cbo 30 ? vdc (i c = 1.0 adc, i e = 0) emitter?base breakdown voltage v (br)ebo 3.0 ? vdc (i e = 10 adc, i c = 0) collector cutoff current i cbo ? 50 nadc ( v cb = 15 vdc, i e = 0) 1. fr?5 = 1.0 x 0.75 x 0.062 in. 2. alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. 2 emitter 3 collector 1 base 1 3 2 mmbt918lt1 case 318?08, style 6 sot?23 (to?236ab)
leshan radio company, ltd. o2?2/2 mmbt918lt1 electrical characteristics (t a = 25c unless otherwise noted) (continued) characteristic symbol min max unit on characteristics dc current gain h fe 20 ?? ?? (i c = 3.0 madc, v ce = 1.0 vdc) collector?emitter saturation voltage v ce(sat) ?? 0.4 vdc (i c = 10 madc, i b = 1.0 madc) base?emitter saturation voltage v be(sat) ? 1.0 vdc (i c = 10 madc, i b = 1.0 madc) small?signal characteristics current?gain ? bandwidth product f t 600 ? mhz (i c = 4.0 madc, v ce = 10 vdc, f = 100 mhz) output capacitance c obo pf (v cb = 0 vdc, i e = 0, f = 1.0 mhz) ? 3.0 (v cb = 10 vdc, i e = 0, f = 1.0 mhz) ? 1.7 input capacitance c ibo ? 2.0 pf (v eb = 0.5 vdc, i c = 0, f = 1.0 mhz) noise figure nf ? 6.0 db (i c = 1.0 madc, v ce = 6.0 vdc, r s = 50 ? , f = 60 mhz) (figure 1) power output p out 30 ? mw (i c = 8.0 madc, v cb = 15 vdc, f = 500 mhz) common?emitter amplifier power gain g pe 11 ? db (i c = 6.0 madc, v cb = 12 vdc, f = 200 mhz) nf test conditions i c = 1.0 ma v ce = 6.0 volts r s = 50 ? f = 60 mhz g pe test conditions i c = 6.0 ma v ce = 12 volts f = 200 mhz figure 1. nf, g pe measurement circuit 20?200 v bb v cc external 100 k 0.018 f 0.018 f 3 1000 pf bypass 0.018 f 0.018 f 50 ? rf vm c g
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